1/4 2011.11 - rev.a bi direction esd protection diode rsb6.8sm ? applications ? dimensions (unit : mm) ? land size figure (unit : mm) esd protection ? features 1)ultra small mold type. (emd2) 2)bi-directionality. 3)high reliability. 4)by chip-mounter,automatic mounting is possible. ? construction ? structure silicon epitaxial planer ? absolute maximum ratings (ta=25 c) symbol unit ppk w p mw tj c tstg c topor c ? electrical characteristics (ta=25 c) symbol min. typ. max. unit conditions v z 5.78 - 7.82 v i z =1ma i r - - 0.5 a v r =3.5v ct - 30.0 - pf v r =0v , f=1mhz parameter zener voltage reverse current capacitance between terminals junction temperature 150 storage temperature ? 55 to + 150 operation temperature range ? 55 to + 150 power dissipation 150 ? taping dimensions (unit : mm) parameter limits peak pulse power(tp=101000s) 10 emd2 0.8 1.7 0.6 rohm : emd2 jeita : sc - 79 jedec :sod - 523 dot (year week factory) dot (productno.) 1.20.05 1.60.1 0.120.05 0.60.1 0.30.05 0.80.05 data sheet www.rohm.com ? 2011 rohm co., ltd. all rights reserved.
rsb6.8sm 2/4 2011.11 - rev.a 0.001 0.01 0.1 1 10 5 6 7 8 ta= ? 25 c ta=125 c ta=75 c ta=25 c zener current:iz(ma) zener voltage:vz(v) vz - iz characteristics(1) apply voltage 0.001 0.01 0.1 1 10 5 6 7 8 ta= ? 25 c ta=125 c ta=75 c ta=25 c zener current:iz(ma) zener voltage:vz(v) vz - iz characteristics(2) apply voltage 0.0001 0.001 0.01 0.1 1 10 100 1000 0 1 2 3 4 5 ta=125 c ta=25 c ta=75 c reverse current:i r (na) reverse voltage v r (v) v r -i r characteristics(1) apply voltage 0.0001 0.001 0.01 0.1 1 10 100 0 1 2 3 ta=125 c ta=25 c ta=75 c reverse current:i r (na) reverse voltage v r (v) v r -i r characteristics(2) apply voltage 10 100 0 1 2 3 4 5 capacitance between terminals:ct(pf) reverse voltage:v r (v) v r - ct characteristics(1) f=1mhz apply voltage 10 100 0 1 2 3 4 5 capacitance between terminals:ct(pf) reverse voltage:v r (v) v r - ct characteristics(2) f=1mhz apply voltage www.rohm.com ? 2011 rohm co., ltd. all rights reserved. data sheet
rsb6.8sm 3/4 2011.11 - rev.a 6.7 6.8 6.9 7.0 7.1 7.2 zener voltage:vz( ) ta=25 c i z =1ma n=30pcs ave:6.84v vz dispersion map ave:6.99v apply voltage apply voltage 400 420 440 460 480 500 520 540 560 580 600 reverse current:i r (pa) ta=25 c v r =3.5v n=30pcs ave:536.6pa i r dispersion map apply voltage apply voltage ave:482.5pa 30 31 32 33 34 35 36 37 38 39 40 capacitance betweenterminals:ct(pf) ta=25 c f=1mhz v r =0v n=10pcs ct dispersion map ave 37.11pf ave 37.05pf apply voltage apply voltage 1 10 100 1000 10000 0.1 1 10 dynamic impedance:zz( ) zener current(ma) zz - iz characteristics(1) apply voltage 1 10 100 1000 10000 0.1 1 10 dynamic impedance:zz( ) zener current(ma) zz - iz characteristics(2) apply voltage 10 100 1000 0.001 0.01 0.1 1 10 100 1000 transient thermal impedance rth( c/w) rth(j - a) rth(j -c) on glass - epoxy substrate time:t(s) rth - t characteristics www.rohm.com ? 2011 rohm co., ltd. all rights reserved. data sheet
rsb6.8sm 4/4 2011.11 - rev.a 0 5 10 15 20 25 30 no break at 30kv c=200pf r=0 c=150pf r=330 c=100pf r=1.5k ave 9.9kv electrostatic discharge test esd [kv] esd dispersion map(1) apply voltage 0 5 10 15 20 25 30 no break at 30kv c=200pf r=0 c=150pf r=330 c=100pf r=1.5k ave 8.5kv electrostatic discharge test esd [kv] esd dispersion map(2) apply voltage www.rohm.com ? 2011 rohm co., ltd. all rights reserved. data sheet
r 1 120 a ww w .rohm.com ? 20 1 1 rohm co., ltd. all rights reserved. notice rohm customer support system http://ww w . r ohm.com/contact/ thank you for your accessing to rohm p r oduct informations. mo r e detail p r oduct informations and catalogs a r e available, please contact us. notes
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